| PART |
Description |
Maker |
| M464S1724CT1 M464S1724CT1-C1H M464S1724CT1-C1L M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD
|
Samsung semiconductor
|
| M463S1654DT1 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| M463S1724DN1 |
16Mx64 SDRAM mSODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synch. DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料
16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| M464S0924CT1 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M470L6423CK0 |
64Mx64 200pin DDR SDRAM SODIMM based on DDP 64Mx8 Data Sheet
|
Samsung Electronic
|
| M464S6453DKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S6554MTS |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S0424FTS |
4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
